1 features ? ezbright power chip led rf performance ? 450 nm - 110+ mw ? 460 nm - 110+ mw ? 470 nm - 90+ mw ? 527 nm - 30+ mw ? lambertian radiation ? conductive epoxy, solder paste or preforms, or flux eutectic attach ? low forward voltage C 3.2 v typ at 150 ma ? single wire bond structure ? dielectric passivation across epi surface applications ? general illumination C aircraft C decorative lighting C task lighting C outdoor illumination C projection lighting ? white leds ? crosswalk signals ? backlighting ? automotive cree ? ez500-n? gen 2 led data sheet (cathode-up) c xxx ez500-s xx x00-2 crees ezbright? leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary optical design and device technology to deliver superior value for high-intensity leds. the optical design maximizes light extraction effciency and enables a lambertian radiation pattern. additionally, these leds are die attachable with conductive epoxy, solder paste or solder preforms, as well as the fux eutectic method. these vertically structured, low forward voltage led chips are approximately 170 microns in height. crees ez? chips are tested for conformity to optical and electrical specifcations. these leds are useful in a broad range of applications, such as general illumination, automotive lighting and lcd backlighting. c xxx ez500-sxxx00-2 chip diagram d a t a s h e e t : c p r 3 e b r e v . a anode (+) bottom view thickness 170 m side view backside ohmic metallization 480 x 480 m top view cathode ( - ), 130 x 13 0 m mesa (junction) 450 x 450 m subject to change without notice. www.cree.com
2 maximum ratings at t a = 25c note 1 c xxx ez500-s xx x00-2 dc forward current 300 ma peak forward current 400 ma note 3 led junction temperature 150c reverse voltage 5 v operating temperature range -40c to +100c led chip storage temperature -40c to +120c recommended die sheet storage conditions 30c / 85% rh typical electrical/optical characteristics at t a = 25c, if = 150 ma note 2 part number forward voltage (v f , v) reverse current [i(vr=5 v), a] full width half max ( o d , nm) min. typ. max. max. typ. c450ez500-s xx x00-2 2.8 3.2 3.6 2 19 c460ez500-s xx x00-2 2.8 3.2 3.6 2 20 c470ez500-s xx x00-2 2.8 3.2 3.6 2 23 c527ez500-s xx x00-2 2.8 3.3 3.6 2 35 mechanical specifcations c xxx ez500-s xx x00-2 description dimension tolerance p-n junction area (m) 450 x 450 40 chip area (m) 480 x 480 40 chip thickness (m) 170 25 top au bond pad diameter (m) 130 x 130 15 au bond pad thickness (m) 3.0 1.0 back contact metal area (m) 480 x 480 40 back contact metal thickness (m) 3.0 1.0 notes: 1. maximum ratings are package-dependent. the above ratings were determined using a silicone encapsulated chip on mcpcb for characterization. ratings for other packages may differ. the junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). see cree ezbright applications note for assembly-process information. 2. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 350 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average expected by the manufacturer in large quantities and are provided for information only. all measurements were made using a au-plated to header without an encapsulant. optical characteristics measured in an integrating sphere using illuminance e. 3. the maximum forward current is determined by the thermal resistance between the led junction and ambient. it is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the led junction to ambient in order to optimize product performance. 0 50 100 150 200 250 300 350 50 60 70 80 90 100 110 120 130 140 150 maximum oeatin cuent (ma) amient temeatue ( c) th - a 10 c th - a 20 c th - a 30 c th - a 40 c copyright ? 2013 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez500-n are trademarks of cree, inc. cpr3eb rev. a cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5870 www.cree.com/chips
3 standard bins for c xxx ez500-s xx x00-2 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx ez500-s xx x00-2) orders may be flled with any or all bins (c xxx ez500-0 xxx- 2) contained in the kit. all radiant fux and all dominant wavelength values shown and specifed are at if = 150 ma. radiant fux values are measured using au-plated headers without an encapsulant. c450ez500-s11000-2 c450ez500-0421-2 c450ez500-0422-2 c450ez500-0423-2 c450ez500-0424-2 c450ez500-0417-2 c450ez500-0418-2 c450ez500-0419-2 c450ez500-0420-2 c450ez500-0413-2 c450ez500-0414-2 c450ez500-0415-2 c450ez500-0416-2 c450ez500-0409-2 c450ez500-0410-2 c450ez500-0411-2 c450ez500-0412-2 c450ez500-0405-2 c450ez500-0406-2 c450ez500-0407-2 c450ez500-0408-2 190 170 150 130 110 dominant wavelength (nm) radiant flux (mw) 447.5 450 452.5 445 455 C460EZ500-S11000-2 c460ez500-0421-2 c460ez500-0422-2 c460ez500-0423-2 c460ez500-04124-2 c460ez500-0417-2 c460ez500-0418-2 c460ez500-0419-2 c460ez500-0420-2 c460ez500-0413-2 c460ez500-0414-2 c460ez500-0415-2 c460ez500-0416-2 c460ez500-0409-2 c460ez500-0410-2 c460ez500-0411-2 c460ez500-0412-2 c460ez500-0405-2 c460ez500-0406-2 c460ez500-0407-2 c460ez500-0408-2 190 170 150 130 110 dominant wavelength (nm) 457.5 460 462.5 455 465 radiant flux (mw) copyright ? 2013 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez500-n are trademarks of cree, inc. cpr3eb rev. a cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5870 www.cree.com/chips
4 standard bins for c xxx ez500-s xx x00-2 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx ez500-s xx x00-2) orders may be flled with any or all bins (c xxx ez500-0 xxx- 2) contained in the kit. all radiant fux and all dominant wavelength values shown and specifed are at if = 150 ma. radiant fux values are measured using au-plated headers without an encapsulant. c470ez500-s09000-2 c470ez500-0417-2 c470ez500-0418-2 c470ez500-0419-2 c470ez500-0420-2 c470ez500-0413-2 c470ez500-04014-2 c470ez500-04015-2 c470ez500-04016-2 c470ez500-0409-2 c470ez500-0410-2 c470ez500-0411-2 c470ez500-0412-2 c470ez500-0405-2 c470ez500-0406-2 c470ez500-0407-2 c470ez500-0408-2 c470ez500-0401-2 c470ez500-0402-2 c470ez500-0403-2 c470ez500-0404-2 170 150 130 110 90 dominant wavelength (nm) radiant flux (mw) 467.5 470 472.5 465 475 c527ez500-s3000-2 c527ez500-0413-2 c527ez500-0414-2 c527ez500-0415-2 c527ez500-0410-2 c527ez500-0411-2 c527ez500-0412-2 c527ez500-0407-2 c527ez500-0408-2 c527ez500-0409-2 c527ez500-0404-2 c527ez500-0405-2 c527ez500-0406-2 c527ez500-0401-2 c527ez500-0402-2 c527ez500-0403-2 70 60 50 40 30 dominant wavelength (nm) radiant flux (mw) 525 530 535 520 copyright ? 2013 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez500-n are trademarks of cree, inc. cpr3eb rev. a cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5870 www.cree.com/chips
5 characteristic curves these are representative measurements for the ezbright power chip led products. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 0% 50% 100% 150% 200% 250% 0 100 200 300 400 relative light intensity if (ma) relative intensity vs. forward current 65% 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 relative light intensity junction temperature ( c) relative light intensity vs junction temperature -10 -5 0 5 10 0 100 200 300 400 d w shift (nm) if (ma) wavelength shift vs. forward current -2 -1 0 1 2 3 4 5 6 25 50 75 100 125 150 dw shift (nm) junction temperature ( c) dominant wavelength shift vs junction temperature 0 50 100 150 200 250 300 350 400 2 2.5 3 3.5 4 if (ma) vf (v) forward current vs. forward voltage - 0.600 - 0.500 - 0.400 - 0.300 - 0.200 - 0.100 0.000 25 50 75 100 125 150 voltage shift (v) junction temperature ( c) voltage shift vs junction temperature copyright ? 2013 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez500-n are trademarks of cree, inc. cpr3eb rev. a cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5870 www.cree.com/chips
6 radiation pattern this is a representative radiation pattern for the ezbright power chip led product. actual patterns will vary slightly for each chip. copyright ? 2013 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez500-n are trademarks of cree, inc. cpr3eb rev. a cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5870 www.cree.com/chips
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